Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide

Applied Physics Letters

Volumn 93, Issue 1, 2008, Pages

  Koveshnikov, S ^a,b   Adamo, C ^c   Tokranov, V ^b   Yakimov, M ^b   Kambhampati, R ^b   Warusawithana, M ^c   Schlom, D G ^c   Tsai, W ^a   Oktyabrsky, S ^b  

^a INTEL CORPORATION   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; ENERGY STORAGE; EPITAXIAL LAYERS; GALLIUM ALLOYS; LANTHANUM ALLOYS; METALS; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; MOS DEVICES; NONMETALS; OZONE WATER TREATMENT; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; STRUCTURAL METALS; SYSTEM STABILITY; THERMODYNAMIC STABILITY;

AMERICAN INSTITUTE OF PHYSICS (AIP); AMORPHOUS SILICON (A SI); ANNEALING TEMPERATURE (TA); CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL AND STRUCTURAL PROPERTIES; EQUIVALENT OXIDE THICKNESS (EOT); FERMI LEVEL PINNING; GATE OXIDES; HIGH DIELECTRIC CONSTANT (HIGH K); INTERFACE STATE DENSITIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PASSIVATION LAYERS; SI LAYER; THERMAL STABILITY; X RAY MICROANALYSIS (XRMA);

AMORPHOUS SILICON;

EID: 47249135991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952830     Document Type: Article

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