Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2008, Pages

  Yu, Shimeng ^a   Zhao, Yuning ^a   Du, Gang ^a   Kang, Jinfeng ^a   Han, Ruqi ^a   Liu, Xiaoyan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

6T CELLS; 8T CELLS; FIN LINES; FIN-THICKNESS; FINFETS; GATE LENGTH VARIATIONS; MIXED MODES; PROCESS VARIATIONS; READ STABILITIES; SRAM CELLS; SRAM DESIGNS; STATIC-NOISE MARGINS; WORST CASE;

CIRCUIT SIMULATION; FINS (HEAT EXCHANGE); LOGIC DESIGN; PHOTORESISTS; RANDOM PROCESSES; ROUGHNESS MEASUREMENT; SENSITIVITY ANALYSIS; SOLID STATE DEVICES;

STATIC RANDOM ACCESS STORAGE;

EID: 63249088267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2008.4760701     Document Type: Conference Paper

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