Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Journal of Semiconductors

Volumn 30, Issue 2, 2009, Pages

  Liu, Hanfa ^a   Zhang, Huafu ^a   Lei, Chengxin ^a   Yuan, Changkun ^a  

^a SHANDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Magnetron sputtering; Sputtering pressure; Transparent conducting films; Zirconium doped zinc oxide films

Indexed keywords

CRYSTALLINITIES; DEPOSITED FILMS; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; HEXAGONAL STRUCTURES; HIGH TRANSMITTANCE; HIGH TRANSPARENCY; LOW RESISTIVITY; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SPUTTERING PRESSURES; TRANSPARENT CONDUCTING FILMS;

CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; FILM PREPARATION; MAGNETRON SPUTTERING; MAGNETRONS; ZINC; ZINC OXIDE; ZIRCONIUM;

OXIDE FILMS;

EID: 63049128335     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/2/023001     Document Type: Article

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