Properties of transparent conducting ZnO:Ga films prepared by RF magnetron sputtering

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 2, 2005, Pages 314-318

  Yu, Xuhu ^a   Ma, Jin ^a   Ji, Feng ^a   Wang, Yuheng ^a   Wang, Cuiying ^b   Ma, Honglei ^a  

^a SHANDONG UNIVERSITY   (China)

^b TAISHAN MEDICAL UNIVERSITY   (China)

Author keywords

Electrical and optical properties; Magnetron sputtering; ZnO:Ga films

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; ZINC OXIDE;

GA FILM; GALLIUM DOPED ZINC OXIDE (ZNO:GA); GLASS SUBSTRATES; HEXAGONAL WURTZITE STRUCTURE; POLYCRYSTALLINE FILM; RADIOFREQUENCY (RF) MAGNETRON SPUTTERING; TRANSPARENT CONDUCTING FILM;

CONDUCTIVE FILMS;

EID: 15944399440     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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