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Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

(7) Nepal, N a Zavada, J M a Lee, D S b Steckl, A J b Sedhain, A c Lin, J Y c Jiang, H X c

a North Carolina State University (United States)

b University of Cincinnati (United States)

c Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; BINDING ENERGY; CERIUM ALLOYS; CRYSTAL GROWTH; EXCITONS; LASER EXCITATION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; QUENCHING; RARE EARTH ELEMENTS;

ALGAN; BAND-GAP EXCITATIONS; CHARGE TRAPS; DEEP ULTRAVIOLETS; EMISSION LINES; EXCITON-BINDING ENERGIES; EXCITONIC ENERGIES; LASER SOURCES; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITIES; PL SPECTRUM; RARE-EARTH; SOLID-SOURCE MOLECULAR BEAM EPITAXIES; TEMPERATURE DEPENDENCES; THERMAL ACTIVATIONS; TRAP LEVELS; ULTRA VIOLETS; UV EMISSIONS;

EMISSION SPECTROSCOPY;

EID: 63049096577 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3097808 Document Type: Article

Times cited : (9)

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