Formation of aluminum nitride film for high power soft X-ray source using ion-beam assisted deposition method

Solid State Phenomena

Volumn 107, Issue , 2005, Pages 43-46

  Matsutani, Takaomi ^a   Kiuchi, Masato ^a   Shirouzu, Kiyotaka ^b   Yoshioka, Akihiro ^b   Shimizu, Ryuichi ^b   Takahashi, Sadayuki ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^c RIGAKU CORPORATION   (Japan)

Author keywords

Aluminum nitride; High power x ray source; Ion beam assisted deposition

Indexed keywords

COPPER; NITRIDES; THIN FILMS; VAPOR DEPOSITION; X RAYS;

HEAT-CYCLE FATIGUE; IONS ASSISTED AL VAPOR DEPOSITION METHOD (IBAD);

ALUMINUM;

EID: 24944510539     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.107.43     Document Type: Conference Paper

References (11)

1. D. Münchmeyer and J. Langen: Rev. Sci. Instr. 63 (1992) 713.
2. S. Omori, H. Ishii, and Y. Nihei: Surface Science 381 (1997) 165.
3. H. Ishii, S. Shiraki, S. Omori, M. Owari, M. Doi, S. Kojima, E. Yamada, S. Takahashi, K. Tsukamoto, T. Koshikawa, and Y. Nihei: in "Microbeam Analysis 2000" ed. by D.B. Williams and R. Shimizu: Institute of Physics Conference Series Number 165 (2000) 139.
4. S. N. Mohammad and H. Morkoç: Progress in Quantum Electronics 20 (1996) 361.
5. M. van Schilfgaarde and A. Sher, A. -B. Chen: Journal of Crystal Growth, 178 (1997) 8.
6. P. K. Kuo, G. W. Auner, and Z. L. Wu: Thin Solid Films, 253 (1994) 223.
7. G.Y. Meng, S. Xie, D.K. Peng, Thin Solid Films 334 (1998) 145.
8. C.M. Zetterling, M. Ostling, K. Wongchotigul, M.G. Spencer, X. Tang, J. Appl. Phys. 82 (1997) 2990.
9. C. Henlein, J.K. Grepstad, S. Einfeldt, D. Hommel, T. Berge, A.P. Grande, J. Appl. Phys. 83 (1998) 6023.
10. D.-Y. Wang, Y. Nagahata, M. Masuda, Y. Hayashi, J. Vac. Sci. Technol. A 14 (1996) 3092.
11. K. Shirouzu, A. Yoshioka, R. Shimizu, Y. Takahashi, M. Kiuchi, and T. Matsutani: Extended Abstracts (The 64th Autumn Meeting, 2003) The Japan Society of Applied Phisycs No.2 (2003) 616 (in Japanese).