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Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

Electrical characterization of Er- and Pr-implanted GaN films

(8) Song, S F a Chen, W D a Zhang, Chunguang a Bian, Liufang a Hsu, C C a Lu, L W a Zhang, Y H a Zhu, Jianjun a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLS; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ENERGY GAP; ERBIUM; ION IMPLANTATION; IONIC CONDUCTION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRASEODYMIUM; SCHOTTKY BARRIER DIODES; THIN FILMS;

CONDUCTION BAND; ISOPROPYL ALCOHOL; RAPID THERMAL ANNEALING (RTA); TRANSIENT SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 20844459631 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1901828 Document Type: Article

Times cited : (24)

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