Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Zavada, J M ^a   Nepal, N ^b   Ugolini, C ^b   Lin, J Y ^b   Jiang, H X ^b   Davies, R ^c   Hite, J ^c   Abernathy, C R ^c   Pearton, S J ^c   Brown, E E ^d   Hommerich U ^d  

^a U S ARMY RESEARCH OFFICE   (United States)

^b KANSAS STATE UNIVERSITY   (United States)

^c University of Florida   (United States)

^d HAMPTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED INTENSITY; MAGNETIC BEHAVIOR;

DOPING (ADDITIVES); ERBIUM; GALLIUM NITRIDE; LASER EXCITATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SATURATION MAGNETIZATION;

EPILAYERS;

EID: 34547701962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767992     Document Type: Article

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