Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors

Chinese Physics B

Volumn 17, Issue 11, 2008, Pages 4292-4299

  Zhang, Jia Hong ^a   Huang, Qing An ^a   Yu, Hong ^a   Lei, Shuang Ying ^a  

^a Southeast University   (China)

Author keywords

Band mixing; Band structure; Piezoresistive; Silicon nanoplate

Indexed keywords

BAND STRUCTURE; NANOCRYSTALLINE MATERIALS; POISSON EQUATION; SEMICONDUCTING SILICON; SENSORS;

BAND MIXING; DINGER EQUATIONS; DISPERSION STRUCTURES; EFFECTIVE MASS; ELECTRO-MECHANICAL PROPERTIES; MECHANICAL SENSORS; P TYPES; P-TYPE SILICONS; PIEZORESISTIVE; PIEZORESISTIVE COEFFICIENTS; PIEZORESISTIVITY; QUANTIZATION EFFECTS; SINGLE-CRYSTAL SILICONS; SPIN-ORBIT COUPLING EFFECTS; STRESS DEPENDENTS; STRONG-MIXING; SUBBAND STRUCTURES; THEORETICAL STUDIES;

NONMETALS;

EID: 62749131284     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/11/055     Document Type: Article

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