First-order piezoresistance coefficients in heavily doped p-type silicon crystals

Sensors and Actuators, A: Physical

Volumn 133, Issue 1, 2007, Pages 72-81

  Kozlovskiy, S I ^a   Nedostup, V V ^a   Boiko, I I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Heavily doped p type silicon; Piezoresistance; Spin orbit split off band

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CRYSTAL IMPURITIES; PIEZOELECTRIC DEVICES; SEMICONDUCTING SILICON;

HEAVILY DOPED P-TYPE SILICON; ION SCATTERING; PIEZORESISTANCE; SPIN-ORBIT SPLIT-OFF BAND;

CRYSTALS;

EID: 33845588778     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.03.009     Document Type: Article

References (21)

1. Smith C.S. Piezoresistance effect in germanium and silicon. Phys. Rev. 94 (1954) 42-49
2. Bryzek J. Impact of MEMS technology on society. Sens. Actuators A 56 (1996) 1-9
3. Ghani T., Armstrong M., Auth C., Bost M., Charvat P., Glass G., Hoffmann T., Johnson K., Kenyon C., Klaus J., McIntyre B., Mistry K., Murthy A., Sandford J., Silberstein M., Sivakumar S., Smith P., Zawadzki K., Thompson S., and Bohr M. A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors. Proceedings of the International Electron Devices Meeting (2003) 978
4. Pikus G.E., and Bir G.L. Effect of deformation on the hole energy spectrum of germanium and silicon. Sov. Solid State Phys. 1 (1960) 1502-1517
5. Bir G.L., and Pikus G.E. Effect of deformation on electrical properties of the p-type germanium and silicon. Sov. Solid State Phys. 1 (1959) 1828-1840 (in Russian)
6. Pikus G.E., and Bir G.L. Symmetry and Strain Induced Effects in Semiconductors (1974), Wiley, New York
7. Tufte O.N., and Stelzer E.L. Piezoresistive properties of silicon diffused layers. Phys. Rev. 34 (1963) 313-318
8. Bir G.L., Bloom A.I., and Ilisavsky U.V. The effect of uniaxial strain of the transport phenomena in p-Si. Proceedings of the VII International Conference on Physical Semiconductor. Paris (1964) 529-535
9. Suzuki K., Hasegawa H., and Kanda Y. Origin of the linear and nonlinear piezoresistance effects in p-type silicon. Jpn. J. Appl. Phys. 23 (1984) L871-L874
10. Lenkkeri J.T. Nonlinear effects in the piezoresistivity of p-type silicon. Phys. Stat. Sol. 136 (1986) 373-385
11. Kanda Y. Piezoresistance effect of silicon. Sens. Actuators A 28 (1991) 83-91
12. Matsuda K., Suzuki K., Yamamura K., and Kanda Y. Nonlinear piezoresistance effects in silicon. J. Appl. Phys. 73 (1993) 1838-1847
13. Toriyama T., and Sugiyama S. Analysis of piezoresistance in p-type silicon for mechanical sensors. J. Microelctromech. Syst. 11 (2002) 598-604
14. Matsuda K. Strain-dependent hole masses and piezoresistive properties of silicon. J. Comput. Electron. 3 (2004) 273-276
15. Kozlovskiy S.I., and Boiko I.I. First-order piezoresistance coefficients in silicon crystals. Sens. Actuator A 118 (2005) 33-43
16. Ziman J.M. Principles of the Theory of Solids (1972), Cambridge University Press, Cambridge
17. Yu P.Y., and Cardona M. Fundamentals of Semiconductors, Physics and Material Properties (2002), Springer
18. Kim C.K., Cardona M., and Rodriguez S. Effect of free carriers on the elastic constants of p-type silicon and germanium. Phys. Rev. B 13 (1976) 5429-5441
19. R.A. Smith, Semiconductors, Cambridge, 1959.
20. Cerdeira F., Fjeldly T.A., and Cardona M. Interaction between electronic and vibronic Raman scattering in heavily doped silicon. Solid state Commun. 13 (1973) 326-328
21. Blakemore J.S. Semiconductor Statistics (1962), Pergamon Press Inc., New York