Calculations of hole mass in [1 1 0]-uniaxially strained silicon for the stress-engineering of p-MOS transistors

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 701-708

  Guillaume, T ^a   Mouis, M ^a  

^a IMEP LAHC   (France)

Author keywords

Effective mass; Hole mobility; p MOSFET; Strained silicon; Stress; Valence band

Indexed keywords

BAND STRUCTURE; COMPUTATION THEORY; HOLE MOBILITY; NUMERICAL ANALYSIS; SILICON; STRESSES;

EFFECTIVE MASSES; P-MOSFET; STRAINED SILICON; VALENCE BANDS;

MOSFET DEVICES;

EID: 33646498521     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.040     Document Type: Article

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