EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7122, Issue , 2008, Pages

  Kamo, Takashi ^a   Aoyama, Hajime ^a   Tanaka, Toshihiko ^a   Suga, Osamu ^a   Abe, Tsukasa ^b   Takikawa, Tadahiko ^b   Hayashi, Naoya ^b   Shoki, Tsutomu ^c   Usui, Youichi ^c   Hosoya, Morio ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b DAI NIPPON PRINTING CO LTD   (Japan)

^c HOYA CORPORATION   (Japan)

Author keywords

Absorber; EUV lithography; Light shield area; Mask; Reflectivity; Shadowing effect

Indexed keywords

ABSORBER; EUV LITHOGRAPHY; LIGHT SHIELD AREA; REFLECTIVITY; SHADOWING EFFECT;

MASKS; REFLECTION; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 62649092456     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.801576     Document Type: Conference Paper

References (9)

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