Development of new chrome blanks for 65nm-node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 974-982

  Hashimoto, M ^a   Yamada, T ^a   Sakamoto, M ^a   Hara, M ^a   Ohkubo, Y ^a   Ushida, M ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

193nm att PSM; 65nm node; Blanks; Chrome; Dry etch; Etching margin; Resist thinning

Indexed keywords

ASPECT RATIO; DEGRADATION; DRY ETCHING; IMAGE ENHANCEMENT; OPTICAL RESOLVING POWER; OPTIMIZATION; PHOTORESISTS; RELAXATION PROCESSES; STRESSES; SURFACE TENSION;

193NM ATT-PSM; 65NM NODE; BLANKS; CHROME; DRY-ETCH; ETCHING MARGINS; RESIST THINNING;

CHROMIUM;

EID: 19844372783     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.580776     Document Type: Conference Paper

References (4)

1. Y. Sato, et al., "Process bias control with thin Cr film blanks for 90nm-node reticle fabrication", SPIE Vol. 4889
2. T. Higuchi, et al., "Photomask blanks enhancement by optimizing resist baking and coating for advanced e-beam reticle fabrication", SPIE Vol. 2793
3. M. Hashimoto, et al., "CAR blanks feasibility study results for the advanced EB reticle fabrication (III)", SPIE Vol. 4409
4. International technology roadmap for semiconductors 2003 edition, Lithography, Table 79a "Optical Mask Requirements"