Strain effect on polarized optical properties of c-plane GaN and m-plane GaN

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 2, 2009, Pages 206-210

  Renchun, Tao ^a   Tongjun, Yu ^a   Chuanyu, Jia ^a   Zhizhong, Chen ^a   Zhixin, Qin ^a   Guoyi, Zhang ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAINS; INGAN/GAN QUANTUM WELLS; OSCILLATOR STRENGTHS; PERTURBATION THEORIES; POLARIZATION DEGREES; POLARIZED LIGHT EMISSIONS; STRAIN EFFECTS; TE MODES; THEORETICAL CALCULATIONS; TM MODES;

CEMENTS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; OPTICAL PROPERTIES; PERTURBATION TECHNIQUES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 62549150330     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880404     Document Type: Conference Paper

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