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Volumn 527-529, Issue PART 2, 2006, Pages 915-918

Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation

Author keywords

4H SiC; Annealing; Atomic force microscopy; Graphite encapsulation; Schottky diodes

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GRAPHITE; LEAKAGE CURRENTS; SILICON CARBIDE; SURFACE ROUGHNESS;

CURRENT-VOLTAGE BARRIER HEIGHT; GRAPHITE ENCAPSULATION;

SCHOTTKY BARRIER DIODES;

EID: 38049034474 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.915 Document Type: Conference Paper

Times cited : (2)

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