Substrate heterostructure effects on interface composition, microstructure development and functional properties of PZT thin films

Acta Materialia

Volumn 57, Issue 7, 2009, Pages 2328-2338

  Habouti, Salah ^a   Lahmar, Abdelilah ^a   Dietze, Matthias ^a   Solterbeck, Claus Henning ^a   Zaporojtchenko, Vladimir ^b   Es Souni, Mohammed ^a  

^a UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

Depth profiling; Interface; PZT; XPS

Indexed keywords

ATOMIC SPECTROSCOPY; DEPTH PROFILING; HETEROJUNCTIONS; LEAD; LEAD ALLOYS; MANGANESE COMPOUNDS; OXIDE MINERALS; PEROVSKITE; PHASE INTERFACES; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TEXTURES; THIN FILMS; ZIRCONIUM;

ATOMIC FORCES; DIELECTRIC AND FERROELECTRIC PROPERTIES; DIFFERENT SUBSTRATES; ELECTRON TRANSFERS; FILM ORIENTATIONS; FUNCTIONAL PROPERTIES; HETEROSTRUCTURE; HETEROSTRUCTURES; INTERDIFFUSION LAYERS; INTERFACE; INTERFACE COMPOSITIONS; INTERFACIAL LAYERS; INTERMETALLIC LAYERS; INTERMETALLIC PHASE; LATTICE-MATCHING; LIQUID-PHASE DEPOSITIONS; MICROSTRUCTURE DEVELOPMENT; NEGATIVE SHIFTS; PEAK POSITIONS; PEROVSKITE THIN FILMS; PZT; PZT THIN FILMS; SILICON SUBSTRATES; THICKNESS DEPENDENCES; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS; XPS DEPTH PROFILING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 61849181016     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.02.005     Document Type: Article

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