On PbTiO3 - (111) -Pt interfacial layers and their x-ray photoelectron spectroscopy signature

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Habouti, S ^a   Solterbeck, C H ^a   Es Souni, M ^a   Zaporojtchenko, V ^b  

^a UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BINDING ENERGY; COLLOIDS; DEPTH PROFILING; ELECTRON SPECTROSCOPY; GELATION; INERT GASES; ION BOMBARDMENT; IONS; LEAD; LEAD ALLOYS; OXIDE FILMS; OXIDE MINERALS; PEROVSKITE; PHASE INTERFACES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTRUM ANALYSIS; SURFACE PHENOMENA; SURFACE SEGREGATION; THICK FILMS;

AMORPHOUS OXIDE FILMS; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ATOMIC FORCES; BOMBARDED FILMS; CRYSTALLIZED FILMS; FILM ANNEALING; FILM ROUGHNESSES; INTERFACIAL INTERMETALLICS; INTERFACIAL LAYERS; INTERMETALLIC PHASE; NEGATIVE SHIFTS; PB IONS; PREFERENTIAL SPUTTERING; REDUCING ATMOSPHERES; SEGREGATION PHENOMENONS; SILICON SUBSTRATES; SOL - GELS; TEMPLATE LAYERS; VARIABLE THICKNESSES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57049179513     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3014030     Document Type: Article

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