Corrigendum to ''Mn behaviors in Mn-implanted ZnO" [Acta Mater 57 (2009) 2291-2299] (DOI:10.1016/j.actamat.2009.01.033);Mn behaviors in Mn-implanted ZnO

Acta Materialia

Volumn 57, Issue 7, 2009, Pages 2291-2299

  Wang, Y ^a   Zou, J ^a   Li, Y J ^b   Zhang, B ^b   Lu, W ^b  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Ion implantation; Mn implanted; Zn precipitate; ZnO

Indexed keywords

COBALT COMPOUNDS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; ION IMPLANTATION; NANOCRYSTALS; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

ENERGY DISPERSIVE X RAY SPECTROSCOPY; HIGH DOSE; IMPLANTATION DOSE; IMPLANTED REGION; PHYSICAL PHENOMENA; POROUS STRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ZNMN2O4;

MANGANESE;

EID: 61849179331     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.03.032     Document Type: Erratum

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