An oxide-diluted magnetic semiconductor: Mn-doped ZnO

Applied Physics Letters

Volumn 75, Issue 21, 1999, Pages 3366-3368

  Fukumura, T ^a   Jin, Zhengwu ^a   Ohtomo, A ^a   Koinuma, H ^a,b   Kawasaki, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000128434     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125353     Document Type: Article

References (14)

1. J. K. Furdyna, J. Appl. Phys. 64, R29 (1988).
2. H. Ohno, Science 281, 951 (1998).
3. K. Onodera, T. Masumoto, and M. Kimura, Electron. Lett. 30, 1954 (1994).
4. Z. K. Tang, P. Yu, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Solid State Commun. 103, 459 (1997).
5. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998).
6. T. Minami, H. Sato, H. Nanto, and S. Takata, Jpn. J. Appl. Phys., Part 2 24, L781 (1985).
7. C. H. Bates, W. B. White, and R. Roy, J. Inorg. Nucl. Chem. 28, 397 (1966).
8. T. Fukumura, M. Kawasaki, M. Mizuguchi, and H. Hosono, (unpublished); P. B. Dorain, Phys. Rev. 112, 1058 (1958).
9. T. Fukumura, M. Kawasaki, M. Mizuguchi, and H. Hosono, (unpublished); P. B. Dorain, Phys. Rev. 112, 1058 (1958).
10. W. B. White and K. E. McIlvried, Trans. Br. Ceram. Soc. 64, 521 (1965).
11. T. Mizokawa and A. Fujimori, Phys. Rev. B 48, 14150 (1993).
12. Y. Goldstein and Y. Grinshpan, Phys. Rev. Lett. 39, 953 (1977).
13. M. Sawicki, T. Dietl, J. Kossut, J. Igalson, T. Wojtowicz, and W. Plesiewicz, Phys. Rev. Lett. 56, 508 (1986).
14. T. Wojtowicz, T. Dietl, M. Sawicki, W. Plesiewicz, and J. Jaroszynski, Phys. Rev. Lett. 56, 2419 (1986).