GaN-based laser diode with focused ion beam-etched mirrors

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 382-385

  Ambe, C ^a   Takeuchi, T ^a   Katoh, H ^a   Isomura, K ^a   Satoh, T ^a   Mizumoto, R ^a   Yamaguchi, S ^a   Wetzel, C ^a   Amano, H ^a   Akasaki, I ^a   Kaneko, Y ^b   Yamada, N ^b  

^a MEIJO UNIVERSITY   (Japan)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ETCHING; HETEROJUNCTIONS; LIGHT SOURCES; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

FABRY-PEROT RESONATOR MIRRORS; FOCUSED ION BEAM ETCHING; LASING; LIGHT OUTPUT POWER; PULSED CURRENT INJECTION; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0033528948     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00349-3     Document Type: Article

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