General control of transition-metal-doped GaN nanowire growth: Toward understanding the mechanism of dopant incorporation

Nano Letters

Volumn 8, Issue 9, 2008, Pages 2674-2681

  Stamplecoskie, Kevin G ^a   Ju, Ling ^a   Farvid, Shokouh S ^a   Radovanovic, Pavle V ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CHROMIUM; COBALT; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; IRON COMPOUNDS; MANGANESE; MANGANESE COMPOUNDS; NANOWIRES; SEMICONDUCTING GALLIUM; SYNTHESIS (CHEMICAL);

CHEMICAL VAPOR DEPOSITION METHODS; DOPANT INCORPORATIONS; DOPANT IONS; DOPANT PRECURSORS; DOPING CONCENTRATIONS; DOPING MECHANISMS; FIELD STABILIZATIONS; GAN NANOWIRES; GAS-PHASE INTERMEDIATES; INITIAL CONCENTRATIONS; ION PRECURSORS; IRON CHLORIDES; METAL IMPURITIES; METAL-DOPED; SYNTHESIS AND CHARACTERIZATIONS;

DOPING (ADDITIVES);

EID: 61549143046     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8009523     Document Type: Article

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