Modification of the electronic properties of GaN nanowires by Mn doping

Applied Physics Letters

Volumn 91, Issue 8, 2007, Pages

  Chen, Xihong ^a   Lee, Seung Joon ^a   Moskovits, Martin ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; THERMAL DIFFUSION; TRANSPORT PROPERTIES;

ACCEPTOR STATES; SOURCE DRAIN CURRENT;

NANOWIRES;

EID: 34548256001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2773747     Document Type: Article

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