Leakage current behavior of SrBi 2Ta 2O 9 ferroelectric thin films on different bottom electrodes

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6160-6164

  Das, Rasmi R ^a   Bhattacharya, P ^a   Katiyar, Ram S ^a   Bhalla, A S ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BARRIER HEIGHTS; BOTTOM ELECTRODES; COERCIVE FIELD; CURRENT BEHAVIORS; DISSIPATION FACTORS; ELEVATED TEMPERATURE; LAYERED STRUCTURES; MAXIMUM VALUES; OPTICAL DIELECTRIC CONSTANT; OXIDE ELECTRODES; PLATINIZED SILICON; PULSED-LASER DEPOSITION TECHNIQUE; RESISTIVE OXIDES; SBT THIN FILM; SCHOTTKY EMISSION MODEL; X-RAY DIFFRACTION STUDIES;

FERROELECTRIC THIN FILMS; PLATINUM; PULSED LASER DEPOSITION; SILICON; SILICON OXIDES; THIN FILMS; X RAY DIFFRACTION;

ELECTRODES;

EID: 0037113069     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515104     Document Type: Article

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