Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Sato, Shin Ichiro ^a   Ohshima, Takeshi ^a   Imaizumi, Mitsuru ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGED PARTICLES; ENERGY DISSIPATION; OPTICAL INSTRUMENTS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY;

CARRIER REMOVAL RATES; DAMAGE COEFFICIENTS; DEGRADATION BEHAVIORS; DEGRADATION MODELING; DEVICE SIMULATORS; ELECTRICAL DEGRADATIONS; EXTERNAL QUANTUM EFFICIENCIES; MINORITY CARRIER DIFFUSION LENGTHS; NON-IONIZING ENERGY LOSS; ONE-DIMENSIONAL; RADIATION DEGRADATIONS; SPACE SOLAR CELLS; SUB-CELLS; TRIPLE JUNCTIONS;

DEGRADATION;

EID: 61449110992     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079522     Document Type: Article

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