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Volumn 27, Issue 4, 2002, Pages 449-458

Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV

Author keywords

78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); 78.30.Fs III V and II VI semiconductors; 78.40.Fy Semico; 78.66.Fd III V semiconductors

Indexed keywords


EID: 0012113917     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2002-00177-x     Document Type: Article
Times cited : (32)

References (42)
  • 1
    • 0003918819 scopus 로고
    • Institute of Physics Publishing, Bristol and Philadelphia
    • M. Razeghi, in The MOCVD Challenge (Institute of Physics Publishing, Bristol and Philadelphia, 1995), Vol. 2
    • (1995) The MOCVD Challenge , vol.2
    • Razeghi, M.1
  • 11
    • 0031185686 scopus 로고    scopus 로고
    • and references therein
    • A clear review of the causes and consequences of spontaneous atomic ordering in semiconductor alloys (particularly InGaP) and a summary of the optical fingerprints measured by many authors can be found by A. Zunger, MRS Bull. 22, 20 (1997), and references therein
    • (1997) MRS Bull. , vol.22 , pp. 20
    • Zunger, A.1
  • 26
    • 21544442661 scopus 로고
    • P. Ernst, C. Geng, F. Scholz, H. Schweizer, Phys. Stat. Sol. (b), 193, 213 (1996); Appl. Phys. Lett. 67, 2347 (1995)
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2347
  • 37


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.