|
|
Volumn 40, Issue 9 A, 2001, Pages 5221-5226
|
|
Characterization of InGaP/GaAs heterojunction bipolar transistors with a heavily doped base
a
a
HITACHI LTD
(Japan)
|
|
Author keywords
Auger recombination; Back injection; Band gap narrowing; Current gain; Fermi energy; GaAs; HBT; Heterojunction bipolar transistor; InGaP
|
|
Indexed keywords
ELECTRODES;
ENERGY GAP;
ETCHING;
FERMI LEVEL;
LEAKAGE CURRENTS;
MOLECULAR BEAM EPITAXY;
PHOTOLITHOGRAPHY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SUBSTRATES;
AUGER RECOMBINATION;
BACK INJECTION;
GAS-SOURCE MOLECULAR BEAM EPITAXY;
INDIUM GALLIUM PHOSPHIDE;
HETEROJUNCTION BIPOLAR TRANSISTORS;
|
|
EID: 0035456946
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.5221 Document Type: Article |
|
Times cited : (11)
|
|
References (30)
|
