Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 5, 2008, Pages 745-749

  Rong, Wang ^a,b   Yunhong, Liu ^a   Xufang, Sun ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

^b BEIJING RADIATION CENTER   (China)

Author keywords

GaInP GaAs Ge solar cell; Proton irradiation; Spectral response

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OPEN CIRCUIT VOLTAGE; PROTON IRRADIATION; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS; SOLAR CELLS;

PROTON ENERGY; SPECTRAL RESPONSE; TRIPLE-JUNCTION SOLAR CELLS;

SPACE APPLICATIONS;

EID: 40949143993     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.076     Document Type: Article

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