Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 392-395

  Kudrawiec, R ^a   Gladysiewicz, M ^a   Motyka, M ^a   Misiewicz, J ^a   Cywinski G ^b   Siekacz, M ^b   Skierbiszewski, C ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Electroreflectance; GaN; Quantum wells

Indexed keywords

ELECTRIC NETWORK ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; TELECOMMUNICATION REPEATERS; WELLS;

BULK LIKES; CONTACTLESS ELECTROREFLECTANCE; ELECTROREFLECTANCE; EXPERIMENTAL DATUM; GAN; INDIUM ATOMS; MATERIAL SYSTEMS; MULTI QUANTUM WELLS; QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 61349196853     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.004     Document Type: Article

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