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Volumn 110, Issue 2, 2006, Pages 175-181
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Crack free GaInN/AlInN multiple quantum wells grown on GaN with strong intersubband absorption at 1.55 μm
b
TOPGAN LTD
(Poland)
c
UNIV PARIS SUD
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION;
CRACKS;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
OPTIMIZATION;
PHOTOLUMINESCENCE;
PLASMAS;
X RAY DIFFRACTION ANALYSIS;
INTERSUBBAND ABSORPTION;
INTERSUBBAND STRUCTURES;
ROOM TEMPERATURE;
SUBSTRATE MATERIALS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 33748705344
PISSN: 05874246
EISSN: None
Source Type: Journal
DOI: 10.12693/APhysPolA.110.175 Document Type: Article |
Times cited : (4)
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References (11)
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