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Volumn 110, Issue 2, 2006, Pages 175-181

Crack free GaInN/AlInN multiple quantum wells grown on GaN with strong intersubband absorption at 1.55 μm

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CRACKS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; PLASMAS; X RAY DIFFRACTION ANALYSIS;

EID: 33748705344     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.110.175     Document Type: Article
Times cited : (4)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.