Mid-infrared GaSb-based EP-VCSEL emitting at 2.63m

Electronics Letters

Volumn 45, Issue 5, 2009, Pages 265-267

  Ducanchez, A ^a   Cerutti, L ^a   Grech, P ^a   Genty, F ^a,b   Tournie E ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b SUPELEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; HETEROJUNCTIONS; LASERS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PUMPING (LASER); TUNNEL JUNCTIONS;

ACTIVE REGIONS; HETEROSTRUCTURE; MID-INFRARED; MULTI-QUANTUM WELLS; N-DOPED; ROOM TEMPERATURES; SOLID-SOURCE MOLECULAR BEAM EPITAXIES; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE-EMITTING LASERS;

SURFACE EMITTING LASERS;

EID: 61349144327     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20090134     Document Type: Article

References (8)

1. Ortsiefer, M., Bohm, G., and Grau, M.: et al. ' Electrically pumped room temperature CW VCSELs with 2.3m emission wavelength ', Electron. Lett., 2006, 42, (11), p. 640-641 0013-5194
2. Schulz, N., Rattunde, A., and Manz, C.: et al. ' Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3m ', IEEE Photonics Technol. Lett., 2006, 18, (9-12), p. 1070-1072 1041-1135
3. Ouvrard, A., Garnache, A., and Cerutti, L.: et al. ' Single-frequency tunable Sb-based VCSELs emitting at 2.3m ', IEEE Photonics Technol. Lett., 2005, 17, (10), p. 2020-2022 1041-1135
4. Ducanchez, A., Cerutti, L., and Grech, P.: et al. ' Room-temperature continuous-wave operation of 2.3-m Sb-based electrically pumped monolithic vertical-cavity lasers ', IEEE Photonics Technol. Lett., 2008, 20, (17-20), p. 1745-1747 1041-1135
5. Bachmann, A., Lim, T., and Kashani-Shirazi, K.: et al. ' Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3m ', Electron. Lett., 2008, 44, p. 202-202 0013-5194
6. Ducanchez, A., Cerutti, L., and Grech, P.: et al. ' GaSb-based monolithic EP-VCSEL emitting above 2.5m ', Electron. Lett., 2008, 44, (23), p. 1357 0013-5194
7. Ducanchez, A., Cerutti, L., and Gassenq, A.: et al. ' Fabrication and characterization of GaSb-based monolithic resonant-cavity light-emitting diodes emitting around 2.3m and including a tunnel junction ', IEEE J. Sel. Top. Quantum Electron., 2008, 14, (4), p. 1014-1021 1077-260X
8. Shterengas, L., Belenky, G.L., Kim, J.G., and Martinelli, R.U.: ' Design of high power room-tempertaure continuous-wave GaSb-based type-I quantum well lasers with λ>2.5m ', Semicond. Sci. Technol., 2004, 19, p. 655-658 0268-1242