SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 44, Issue 23, 2008, Pages 1357-1359

GaSb-based monolithic EP-VCSEL emitting above 2.5m

(4) Ducanchez, A a Cerutti, L a Grech, P a Genty, F a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; PUMPING (LASER); TUNNEL JUNCTIONS;

ACTIVE REGIONS; EPITAXIAL STRUCTURES; MULTI QUANTUM WELLS; N-DOPED; PULSED OPERATIONS; ROOM TEMPERATURES; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SURFACE EMITTING LASERS;

EID: 55349115093 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20082845 Document Type: Article

Times cited : (6)

References (5)

1
- 33746666027
- 2-2.7m single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and external-cavity VCSELs, DFB
- ' '
- Garnache, A., Ouvrard, A., Cerutti, L., Barat, D., Vicet, A., Genty, F., Rouillard, Y., Romanini, D., and Cerda-Méndez, E.A.: ' 2-2.7m single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external-cavity VCSELs, DFB ', Proc. SPIE, Photonics Europe, 2006, p. 6184
- (2006) Proc. SPIE, Photonics Europe , pp. 6184
- Garnache, A.¹ Ouvrard, A.² Cerutti, L.³ Barat, D.⁴ Vicet, A.⁵ Genty, F.⁶ Rouillard, Y.⁷ Romanini, D.⁸ Cerda-Méndez, E.A.⁹

2
- 0037387473
- 4
- ' ', (), 10.1088/0957-0233/14/4/310 0957-0233
- 4 ', Meas. Sci. Technol., 2003, 14, (4), p. 472-478 10.1088/0957-0233/14/4/310 0957-0233
- (2003) Meas. Sci. Technol. , vol.14 , Issue.4 , pp. 472-478
- Totschnig, G.¹ Lackner, M.² Shau, R.³ Ortsiefer, M.⁴ Rosskopf, J.⁵ Amann, M.-C.⁶ Winter, F.⁷

3
- 33846117396
- (Springer-Verlag), (Optical Sciences)
- Krier, A.: ' Mid infrared semiconductor optoelectronics ', (Springer-Verlag, 2006), (Optical Sciences)
- (2006) Mid Infrared Semiconductor Optoelectronics
- Krier, A.¹

4
- 38849128349
- Room-temperature, monolithic, electrically-pumped type-I quantum well Sb-based VCSELs emitting at 2.3m
- ' ', (), 10.1049/el:20083424 0013-5194
- Cerutti, L., Ducanchez, A., Grech, P., Garnache, A., and Genty, F.: ' Room-temperature, monolithic, electrically-pumped type-I quantum well Sb-based VCSELs emitting at 2.3m ', Electron. Lett., 2008, 44, (3), p. 203-205 10.1049/el:20083424 0013-5194
- (2008) Electron. Lett. , vol.44 , Issue.3 , pp. 203-205
- Cerutti, L.¹ Ducanchez, A.² Grech, P.³ Garnache, A.⁴ Genty, F.⁵

5
- 38849095971
- Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting at 2.3m
- ' ', (), 10.1049/el:20083430 0013-5194
- Bachmann, A., Lim, T., Kashani-Shirazi, K., Dier, O., Lauer, C., and Amann, M.-C.: ' Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting at 2.3m ', Electron. Lett., 2008, 44, (3), p. 202-203 10.1049/el:20083430 0013-5194
- (2008) Electron. Lett. , vol.44 , Issue.3 , pp. 202-203
- Bachmann, A.¹ Lim, T.² Kashani-Shirazi, K.³ Dier, O.⁴ Lauer, C.⁵ Amann, M.-C.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.