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Volumn 44, Issue 3, 2008, Pages 202-203

Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3m

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; PUMPING (LASER); THRESHOLD VOLTAGE; TUNNEL JUNCTIONS;

EID: 38849095971     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083430     Document Type: Article
Times cited : (41)

References (12)
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    • Lauer, C., Szalay, S., Boehm, G., Lin, C., Koehler, F., and Amann, M.-C.: ' Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84m ', IEEE Trans. Instrum. Meas., 2005, 54, (3), p. 1214-1218 10.1109/TIM.2005.847195 0018-9456
    • (2005) IEEE Trans. Instrum. Meas. , vol.54 , Issue.3 , pp. 1214-1218
    • Lauer, C.1    Szalay, S.2    Boehm, G.3    Lin, C.4    Koehler, F.5    Amann, M.-C.6
  • 3
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    • Electrically pumped room temperature CW-VCSELs with emission wavelength of 2m
    • 10.1049/el:20030057 0013-5194
    • Lauer, C., Ortsiefer, M., Shau, R., Rosskopf, J., Boehm, G., Maute, M., Koehler, F., and Amann, M.-C.: ' Electrically pumped room temperature CW-VCSELs with emission wavelength of 2m ', Electron. Lett., 2003, 39, (1), p. 57-58 10.1049/el:20030057 0013-5194
    • (2003) Electron. Lett. , vol.39 , Issue.1 , pp. 57-58
    • Lauer, C.1    Ortsiefer, M.2    Shau, R.3    Rosskopf, J.4    Boehm, G.5    Maute, M.6    Koehler, F.7    Amann, M.-C.8
  • 4
    • 33744552287 scopus 로고    scopus 로고
    • Electrically pumped room temperature CW VCSELs with 2.3m emission wavelength
    • 10.1049/el:20061096 0013-5194
    • Ortsiefer, M., Boehm, G., Grau, M., Windhorn, K., Roenneberg, E., Rosskopf, J., Shau, R., Dier, O., and Amann, M.-C.: ' Electrically pumped room temperature CW VCSELs with 2.3m emission wavelength ', Electron. Lett., 2006, 42, (11), p. 640-641 10.1049/el:20061096 0013-5194
    • (2006) Electron. Lett. , vol.42 , Issue.11 , pp. 640-641
    • Ortsiefer, M.1    Boehm, G.2    Grau, M.3    Windhorn, K.4    Roenneberg, E.5    Rosskopf, J.6    Shau, R.7    Dier, O.8    Amann, M.-C.9
  • 8
    • 0032484829 scopus 로고    scopus 로고
    • Sb-based monolithic VCSEL operating near 2.2m at room temperature
    • 10.1049/el:19980142 0013-5194
    • Baranov, A., Rouillard, Y., Boissier, P., Grech, P., Gaillard, S., and Alibert, C.: ' Sb-based monolithic VCSEL operating near 2.2m at room temperature ', Electron. Lett., 1998, 34, (3), p. 281-282 10.1049/el:19980142 0013-5194
    • (1998) Electron. Lett. , vol.34 , Issue.3 , pp. 281-282
    • Baranov, A.1    Rouillard, Y.2    Boissier, P.3    Grech, P.4    Gaillard, S.5    Alibert, C.6
  • 10
    • 7044254788 scopus 로고    scopus 로고
    • Tunnel junctions for ohmic intra-device contacts on GaSb-substrates
    • 10.1063/1.1793349 0003-6951
    • Dier, O., Sterkel, M., Grau, M., Lin, C., Lauer, C., and Amann, M.-C.: ' Tunnel junctions for ohmic intra-device contacts on GaSb-substrates ', Appl. Phys. Lett., 2004, 85, (12), p. 2388-2389 10.1063/1.1793349 0003-6951
    • (2004) Appl. Phys. Lett. , vol.85 , Issue.12 , pp. 2388-2389
    • Dier, O.1    Sterkel, M.2    Grau, M.3    Lin, C.4    Lauer, C.5    Amann, M.-C.6
  • 11
    • 33750219369 scopus 로고    scopus 로고
    • N-InAsSb/p-GaSb tunnel junctions with extremely low resistivity
    • 10.1049/el:20060341 0013-5194
    • Dier, O., Lauer, C., and Amann, M.-C.: ' n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity ', Electron. Lett., 2006, 42, (7), p. 419-420 10.1049/el:20060341 0013-5194
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    • +-InAsSb/n-GaSb contacts
    • 10.1088/0268-1242/21/9/011 0268-1242
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.