Effect of annealing temperatures on microstructure of (Zr0.8Sn0.2)TiO4 thin films grown by a sol-gel process

Journal of Alloys and Compounds

Volumn 471, Issue 1-2, 2009, Pages 511-514

  Yang, Ru Yuan ^a   Weng, Min Hang ^b   Su, Yan Kuin ^c   Ye, Chang Sin ^c   Wu, Hung Wei ^c  

^a NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

(Zr, Sn)TiO4; Interface; Microstructure; Sol gel; Thin film

Indexed keywords

AMORPHOUS SILICON; ANNEALING; GELATION; GELS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; TIN; TITANIUM COMPOUNDS; ZIRCONIUM;

(ZR, SN)TIO4; AFM; ANNEALING PROCESS; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; CONCENTRATION DISTRIBUTIONS; DIELECTRIC CONSTANTS; INTERFACE; INTERFACE LAYERS; P-TYPE SI; POLY-CRYSTAL FILMS; SI SUBSTRATES; SOL-GEL; TEM; XRD; ZIRCONIUM TIN TITANATES;

AMORPHOUS FILMS;

EID: 60849095805     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.04.007     Document Type: Article

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