Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1186-1191

  Huang, Cheng Liang ^a   Hsu, Cheng Hsing ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MICROSTRUCTURE; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

CRYSTAL PLANES; DISSIPATION FACTORS; METAL INSULATOR SEMICONDUCTORS (MIS); SUBSTRATE TEMPERATURE;

DIELECTRIC FILMS;

EID: 3242669110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759085     Document Type: Article

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