CMOS 6-T SRAM cell design subject to "atomistic" fluctuations

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 565-571

  Cheng, B ^a   Roy, S ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Intrinsic parameter fluctuation; SNM; SRAM; WNM

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; MOSFET DEVICES; STATISTICAL METHODS; SYSTEMS ANALYSIS;

CELL STABILITY; INTRINSIC PARAMETER FLUCTUATION; MODEL CALIBRATION;

STATIC RANDOM ACCESS STORAGE;

EID: 34047250282     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.009     Document Type: Article

References (12)

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