Optimum ferroelectric film thickness in metal-ferroelectric-insulator-semiconductor structures composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 5098-5101

  Takahashi, Kazuhiro ^a   Aizawa, Koji ^b   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(bi,La)4Ti3O12 (BIT); Chemical vapor deposition (CVD); Ferroelectric random access memory (FeRAM); HfO2; MFIS structure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FERROELECTRIC MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS;

(BI,LA)4TI3O12 (BIT); FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); HFO2; MFIS STRUCTURE;

CRYSTAL STRUCTURE;

EID: 33745263725     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5098     Document Type: Article

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