Electrical properties of sol-gel derived BLT films on Si(100) substrates using LaAlO3 buffer layers

Journal of the Korean Physical Society

Volumn 42, Issue SUPPL., 2003, Pages

  Park, B E ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BLT; LaAlO3; MBD; MFIS; Sol gel

Indexed keywords

EID: 12944277955     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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