Influence of the lead source materials on the microstructure and ferroelectric properties of PZT films sputter-deposited using lead and lead oxide

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 35-39

  Chang, W L ^a   He, J L ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Ferroelectric properties; Microstructure; Pb compensation; PZT film

Indexed keywords

BINDING ENERGY; EMISSION SPECTROSCOPY; FERROELECTRICITY; LEAD; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

FERROELECTRIC PROPERTIES; PB COMPENSATION; PZT FILMS; SURFACE ACOUSTIC WAVES (SAW);

FERROELECTRIC THIN FILMS;

EID: 17044427135     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5072-5     Document Type: Conference Paper

References (28)

1. M. Sayer and K. Sreenivas, Science, 247, 1056 (1990).
2. T. Shiosak, Ultrason. Symp. Proc., IEEE, 537(1990).
3. N. Wakiya, K. Kuroyanagi, Y. Xuan, K. Shinozaki, and N. Mizutani, Thin Solid Films, 372, 156 (2000).
4. J.N. Kim, K.S. Shin, D.H. Kim, B.O. Park, N.K. Kim, and S.H. Cho, Applied Surface Science, 206(1-4), 119 (2003).
5. M. Cerqueira, R.S. Nasar, E.R. Leite, E. Longo, and J.A. Varela, Ceram. Int., 26(3), 231 (2000).
6. M.G. Kang, K.T. Kim, and C.I. Kim, Thin Solid Films, 398-399, 448 (2001).
7. O. Sugiyami, Y. Kondo, H. Suzuki, and S. Kaneko, J. Sol-Gel Soc. Technol., 26, 749 (2003).
8. C.R. Cho, Cryst. Res. Technol., 35(1), 77 (2000).
9. N. Ozer and T. Sands, J. Sol-Gel Sci. Technol., 19(1-3), 157 (2000).
10. C.R. Cho, L.F. Francis, and D.L. Polla, Mater. Lett., 38(2), 125 (1999).
11. S.A. Impey, Z. Huang, and A. Patel, J. Appl. Phys., 83(4), 2202 (1998).
12. R. Bruchhaus, Ferroelectrics, 133(1-4), 73 (1992).
13. N.J. Wu, A. Ignatiev, A.W. Mesarwi, H. Lin, K. Xan, and H.D. Shih, Mater. Chem. Phys., 32, 5019 (1993).
14. A.R. Zomorrodian, A. Messarwi, N.J. Wu, and A. Ignatiev, Appl. Surf. Sci., 90, 343 (1995).
15. P. Verardi, F. Craciun, L. Mirenghi, M. Dinescu, and V. Sandu, Appl. Surf. Sci., 138-139, 552 (1999).
16. A.R. Zomorrodian, A.M.A., and N.J. Wu, Ceram. Int., 25(2), 137 (1999).
17. H. Kidoh, T. Ogawa, H. Yashima, A. Morimoto, and T. Shimizu, Jpn. J. Appl. Phys. Pt.1, 31, 2965 (1992).
18. S. Takatani, H. Keiko, K.A. Keiko, and K. Torii, J. Appl. Phys., 85(11), 7784 (1999).
19. C.W. Chung, Y.H. Byun, and H.I. Kim, Microelectron. Eng., 63(4), 353 (2002).
20. W.Y. Choi and H.G. Kim, Jpn. J. Appl. Phys., 138(1A), 122 (1999).
21. W.Y. Choi, J.H. Ahn, and W.J. Lee, Mater. Lett., 37(3), 119 (1998).
22. K. Iijima, I. Ueda, and K. Kugimiya, Jpn. J. Appl. Phys. Pt.1, 30(9B), 2149 (1991).
23. T. Hase and T. Shiosaki, Jpn. J. Appl. Phys. Pt. 1, 30(9B), 2159 (1991).
24. S. Yamauchi and M. Yoshimaru, Jpn. J. Appl. Phys., 35, 1553 (1996).
25. L.N. Chapin and S.A. Myers, Mater. Res. Soc. Symp. Proc., 243, 153 (1992).
26. M.D. Keijser and D.J.M. Dormans, MAS Bull, 21, 37 (1996).
27. C.K. Kwok and S.B. Desu, Ceram. Trans., 25, 85 (1992).
28. T.S. Kim, D.J. Kim, J.K. Lee, and H.J. Jung, J. Vac. Sci. Technol., A15(6), 2831 (1997).