Laser-induced etching of Cr-O doped GaAs and wavelength dependent photoluminescence

Materials Chemistry and Physics

Volumn 86, Issue 2-3, 2004, Pages 414-419

  Mavi, H S ^a   Islam, S S ^b   Rath, S ^a   Chauhan, B S ^b   Shukla, A K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

Nanostructures; Photoluminescence; Semiconductors

Indexed keywords

CHROMIUM; CRYSTAL DEFECTS; ELECTRIC EXCITATION; ELECTROCHEMISTRY; ENERGY GAP; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; WATER;

LASER-INDUCED ETCHING; SURFACE DEFECTS; WAVELENGTH DEPENDENT PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2942650749     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.04.010     Document Type: Article

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