Comparison between continuous and microwave oxygen plasma post-treatment on organosilicon plasma deposited layers: Effects on structure and properties

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3452-3460

  Clergereaux, R ^a   Calafat, M ^a,b   Benitez, F ^b   Escaich, D ^a   Savin de Larclause, I ^a   Raynaud, P ^a   Esteve, J ^b  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

FTIR; Hardness; Oxidation; Plasma processing and deposition; Silicon oxide; Spectroscopic ellipsometry; XPS

Indexed keywords

DEPOSITION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; ORGANOMETALLICS; OXIDATION; SEMICONDUCTING SILICON; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ORGANOSILICON PLASMA; PLASMA DEPOSITION; PLASMA PROCESSING; SPECTROSCOPIC ELLIPSOMETRY;

MONOLAYERS;

EID: 33846908556     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.076     Document Type: Article

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