Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 223-225

  Matsumoto, M ^a   Inayoshi, Y ^a   Murashige, S ^a   Suemitsu, M ^a   Nakajima, S ^b   Uehara, T ^b   Toyoshima, Y ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b Seldsui Chemical Co Ltd   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ELECTRIC DISCHARGES; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HELIUM; INERT GASES; INFRARED SPECTROSCOPY; NITRIDES; PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PRESSURE; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SILICON NITRIDE; SOLAR ENERGY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

BREAKDOWN FIELDS; CHEMICAL VAPORS; FLOW RATIOS; FOURIER TRANSFORM INFRARED; GATE INSULATORS; HIGH-RATE GROWTHS; LOW TEMPERATURES; PULSED PLASMAS; PULSED POWER SUPPLIES; SI (100) SUBSTRATES; SILICON NITRIDE FILMS; SILICON-BASED THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMORPHOUS SILICON;

EID: 59949089654     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021039     Document Type: Article

References (15)

1. K. Cherenack, A. Kattamis, K. Long, I.-C. Cheng, S. Wagner, and J.-C. Sturm, Mater. Res. Soc. Symp. Proc. 936, L01 (2006).
2. J. K. Holt, D. G. Goodwin, A. M. Gabor, F. Jiang, M. Stavola, and H. A. Atwater, Thin Solid Films 430, 37 (2003).
3. A. Masuda, H. Umemoto, and H. Matsumura, Thin Solid Films 501, 149 (2006).
4. A. J. Flewitt, A. P. Dyson, J. Robertson, and W. I. Milne, Thin Solid Films 383, 172 (2001).
5. J. Sancho-Parramon, S. Bosch, and A. Canillas, Appl. Surf. Sci. 253, 65 (2006).
6. B. Karunagaran, S. J. Chung, S. Velumani, and E.-K. Suh, Chem. Phys. 106, 130 (2007).
7. K. M. Chang, C. C. Cheng, and C. C. Lang, Solid-State Electron. 46, 1399 (2002).
8. Y. T. Kim, D. S. Kim, and D. H. Yoon, Mater. Sci. Eng., B 118, 242 (2005).
9. H. Kitabatake, M. Suemitsu, H. Kitahata, S. Nakajima, T. Uehara, and Y. Toyoshima, Jpn. J. Appl. Phys., Part 2 44, L683 (2005).
10. M. Matsumoto, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima, and S. Itou, ECS Trans. 3, 119 (2006).
11. M. Matsumoto, Y. Inayoshi, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, and Y. Toyoshima, Thin Solid Films 516, 6673 (2008).
12. F. Demichelis, F. Giorgis, and C. F. Pirri, Philos. Mag. B 74, 155 (1996).
13. M. A. Pereira, J. A. Diniz, I. Doi, and J. W. Swart, Appl. Surf. Sci. 212-213, 388 (2003).
14. S. Dauwe, L. Mittelstadt, A. Metz, J. Schmidt, and R. Hezel, Proceedings of the Third World Conference on Photovoltaic Energy Conversion, Osaka, 2003, p. 1395.
15. W. M. M. Kessels, F. J. H. van Assche, P. J. van den Oever, and M. C. M. van de Sanden, J. Non-Cryst. Solids 338-340, 37 (2004).