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Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor

(3) Babentsov, V a Franc, J b James, R B c

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b CHARLES UNIVERSITY (Czech Republic)

c BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS;

AB-INITIO CALCULATIONS; CARRIER TRAPPING; CDTE; CDTE:IN; CHARGE COLLECTIONS; DEEP DEFECTS; DONOR LAYERS; EMISSION BANDS; ENERGY LEVELS; NEUTRAL STATE; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; PHOTO-LUMINESCENCE MEASUREMENTS; POSITIVE CHARGES; POSITIVELY CHARGED; THERMOELECTRIC EFFECT SPECTROSCOPIES;

EMISSION SPECTROSCOPY;

EID: 59849085117 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3073738 Document Type: Article

Times cited : (38)

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