Doping, compensation, and photosensitivity of detector grade CdTe

Journal of Materials Research

Volumn 23, Issue 6, 2008, Pages 1751-1757

  Babentsov, V ^a   Franc, J ^b   Fauler, A ^c   Fiederle, M ^c   James, R B ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b CHARLES UNIVERSITY   (Czech Republic)

^c Materialforschungszentrum   (Germany)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTALLOGRAPHY; CURVE FITTING; GERMANIUM; OPTICAL PROPERTIES; PHOTOSENSITIVITY; SEMICONDUCTING CADMIUM TELLURIDE; TIN;

AFTERGLOW EFFECTS; CDTE CRYSTALS; STRONG CORRELATIONS; SURFACE PHOTO VOLTAGE (SPV);

LIGHT SENSITIVE MATERIALS;

EID: 48949117339     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0198     Document Type: Article

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