Study of defect levels in CdTe using thermoelectric effect spectroscopy

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1333-1340

  Soundararajan, Raji ^a   Lynn, Kelvin G ^a   Awadallah, Salah ^a   Szeles, Csaba ^b   Wei, Su Huai ^c  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b II VI Inc   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

CdTe; Defect levels; Thermal ionization energy; Thermally stimulated current (TSC); Thermoelectric effect spectroscopy (TEES); Trapped cross section; Variable heating rate

Indexed keywords

CDTE; DEFECT LEVELS; THERMAL IONIZATION ENERGY; THERMALLY STIMULATED CURRENT (TSC); THERMOELECTRIC EFFECT SPECTROSCOPY (TEES); TRAPPED CROSS-SECTION; VARIABLE HEATING RATE;

IONIZATION; SEMICONDUCTING TELLURIUM; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; THERMOELECTRICITY;

CADMIUM;

EID: 33746211399     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0264-0     Document Type: Conference Paper

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