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Volumn 4355, Issue , 2001, Pages 238-251
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Compensation in semi-intrinsic CdTe based materials
a a a a a a a |
Author keywords
CdTe:Cl; CdTe:Ga; CdZnTe; EDAX mapping; Elementary defects; Fermi level stabilisation; High resistivity; Photoluminescence
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Indexed keywords
BAND STRUCTURE;
DEFECTS;
DETECTORS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
FERMI LEVEL;
IMPURITIES;
PHOTOLUMINESCENCE;
X RAYS;
FERMI-LEVEL STABILIZATION;
CADMIUM ALLOYS;
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EID: 0034934384
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.417791 Document Type: Conference Paper |
Times cited : (7)
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References (28)
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