Development of "kink" in the output I-V characteristics of pseudomorphic Hemt's after hot-electron accelerated testing

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1679-1682

  Meneghesso, G ^a   Cogliati, B ^a   Donzelli, G ^b   Sala, D ^b   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b ALCATEL Telettra   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRONS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; TRANSCONDUCTANCE;

DRAIN CURRENT; HOT ELECTRON; KINK;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031248318     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00138-8     Document Type: Article

References (8)

1. R. Plana et al., "Noise in AlGaAs/InGaAs/GaAs Pseudomorphic HEMT's from 10 Hz to 18 Ghz" IEEE Trans, on El. Dev., ED-40, N. 5, pp. 852-858, 1993.
2. C. Tedesco et al., "Impact ionization and light emission in High-power Pseudomorphic AlGaAs/InGaAs HEMTs", IEEE Trans. El. Dev., Vol. 40, N.7, 1993.
3. G. Meneghesso et al., "Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMTs", Applied Physics Letters, Vol. 69, No. 10, pp.1411-1413, 1996,.
4. G. Meneghesso et al., "Trapped Charge Modulation: A New Cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMT's", IEEE El. Dev. Lett., Vol. 17, N.5, pp.232-234, 1996.
5. D. Sala et al., "Reliability of power pseudomorphic HEMT's submitted to termal and hot-electrons tests", Proc. of ESREF'95, pp 435-440, Bordeaux, France, October 1995.
6. G. Meneghesso et. al., "Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's", Microel. and Rel., V.36, N.11/12, pp.1895-1898, 1996, Presented at ESREF96.
7. K. Lee et al., "A New Tecnique for Characterization of the 'End' Resistance in Modulation-Doped FETs", IEEE Trans. on El. Dev., ED-31, N. 10, pp. 1394-1398, 1984.
8. P. H. Ladbrooke et al., "Low-Field Low-Frequency Dispersion of Transconductance in GaAs MESFETs with Implication for Other Rate-Dependent Anomalies", IEEE Trans, on El. Dev ED-35, n. 3, pp. 257-267, 1988.