In-situ measurement of nitrogen during growth of 4H-SiC by CVD

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 125-128

  VanMil, Brenda L ^a   Lew, Kok Keong ^a   Myers Ward, Rachael L ^a   Holm, Ronald T ^a   Gaskill, D Kurt ^a   Eddy, Charles R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

In situ monitoring; Mass spectroscopy; Nitrogen

Indexed keywords

CAPACITANCE; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; FLOW OF GASES; INDIUM COMPOUNDS; MASS SPECTROMETERS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

CAPACITANCE VOLTAGE; HOT WALL CHEMICAL VAPOR DEPOSITION; IN- SITU MONITORING; MASS SPECTROSCOPY; NITROGEN CONCENTRATIONS; NITROGEN INCORPORATION; NITROGEN PARTIAL PRESSURES; QUADRUPOLE MASS SPECTROMETER;

NITROGEN;

EID: 35548963574     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.125     Document Type: Conference Paper

References (7)

1. A. Thon and T.F. Keuch: Appl. Phys. Lett. Vol. 69 (1996), p. 55
2. J. Schäfer, A. Simons, J. Wolfrum, and R.A. Fischer: Chem. Phys. Lett. Vol. 319 (2000), p. 477
3. S. Cho, G.W. Rubloff, M.E. Aumer, D.B. Thomson, D.P. Partlow, R. Parikh and R.A. Adomaitis: J. Vac. Sci. Technol B Vol. 23 (2005), p. 1386.
4. C.A. Rego, R.S. Tsang, P.W. May, M.N.R. Ashfold, and K.N. Rosser: J. Appl. Phys. Vol. 79 (1996), p. 7264
5. I. Schmidt, C. Benndorf, and P. Joeris: Diamond and Related Materials Vol. 4 (1995), p. 725
6. S.J. Harris, A.M. Weiner and T.A. Perry: Appl. Phys. Lett. Vol. 53 (1998), p. 1605
7. D.J. Larkin, P.G. Neudeck, J.A. Powell, and L.G. Matus: Appl. Phys. Lett. Vol. 65 (1994), p. 1659