Improved ferroelectric polarization of KSrBi2Ta3O12 thin films

Solid State Communications

Volumn 149, Issue 11-12, 2009, Pages 434-437

  Zhang, Shan Tao ^a   Ji, Wei Jin ^a   Wang, Lei ^a   Ding, Lui Yi ^a   Chen, Yan Feng ^a   Liu, Zhi Guo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A. Bi layered Aurivillius compound; A. Thin films; B. Pulsed laser deposition; D. Ferroelectric properties

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC PROPERTIES; FERROELECTRICITY; LASERS; POLARIZATION; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SOLIDS; TANTALUM; THIN FILMS; X RAY ANALYSIS;

A. BI-LAYERED AURIVILLIUS COMPOUND; A. THIN FILMS; B. PULSED LASER DEPOSITION; COMPARISON STUDIES; D. FERROELECTRIC PROPERTIES; DIFFRACTION PEAKS; FERROELECTRIC FATIGUE; FERROELECTRIC POLARIZATION; LASER DEPOSITIONS; MICRO STRUCTURAL; REMNANT POLARIZATIONS; RETENTION PROPERTIES; SILICON (111) SUBSTRATES; SINGLE PHASING; X-RAY DIFFRACTION (XRD) PATTERNS;

FERROELECTRIC FILMS;

EID: 58749108801     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.12.044     Document Type: Article

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