Structures and electrical properties of Bi 5FeTi 3O 15 thin films

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Zhang, Shan Tao ^a   Chen, Yan Feng ^a   Liu, Zhi Guo ^a   Ming, Nai Ben ^a   Wang, Jia ^a   Cheng, Guang Xu ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTIES; HYSTERESIS LOOPS; RIGAKU DIFFRACTOMETERS; ROOM TEMPERATURE;

BALL MILLING; CURRENT DENSITY; DEGREES OF FREEDOM (MECHANICS); DIELECTRIC PROPERTIES; EXCIMER LASERS; FERROELECTRICITY; HYSTERESIS; LEAKAGE CURRENTS; PERMITTIVITY; PEROVSKITE; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

BISMUTH COMPOUNDS;

EID: 20944433096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1893207     Document Type: Article

References (24)

1. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000).
2. J. Wang et al., Science 299, 1719 (2003).
3. H. Zheng et al., Science 303, 661 (2004).
4. M. M. Kumar, V. R. Palkar, K. Srinivas, and S. V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000).
5. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004).
6. K. Y. Yun, M. Noda, and M. Okuyama, Appl. Phys. Lett. 83, 3981 (2003).
7. V. R. Palkar, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002).
8. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 75, 555 (1999).
9. J. S. Kim, C. I. Cheon, Y. N. Choi, and P. W. Jang, J. Appl. Phys. 93, 9263 (2003).
10. J. R. Cheng, N. Li, and L. E. Cross, J. Appl. Phys. 94, 5153 (2003).
11. A. F. M. dos Santos, A. K. Cheetham, W. Tian, X. Q. Pan, Y. F. Jia, N. Murphy, J. Lettieri, and D. G. Schlom, Appl. Phys. Lett. 84, 91 (2004).
12. R. S. Singh, T. Bhimasankaram, G. S. Kumar, and S. V. Suryanarayana, Solid State Commun. 91, 567 (1994).
13. A. Srinivas, D. W. Kim, K. S. Hong, and S. V. Suryanarayana, Appl. Phys. Lett. 83, 2217 (2003).
14. A. Srinivas, S. V. Suryanarayana, G. S. Kumar, and M. M. Kumar, J. Phys.: Condens. Matter 11, 3335 (1999).
15. F. Kube and H. Schmid, Ferroelectrics 129, 101 (1992).
16. R. E. Melgarejo, M. S. Tomar, S. Bhaskar, P. S. Dobal, and R. S. Katiyar, Appl. Phys. Lett. 81, 2611 (2002).
17. D. Wu, A. D. Li, T. Zhu, Z. F. Li, Z. G. Liu, and N. B. Ming, J. Mater. Res. 16, 1325 (2001).
18. S. Kojima, R. Imaizumi, S. Hamazaki, and M. Takashige, Jpn. J. Appl. Phys., Part 1 33, 5559 (1994).
19. M. Popa, J. Frantti, and M. Kakihana, Solid State Ionics 154, 135 (2002).
20. V. B. Podobedov, A. Weber, D. B. Romero, J. P. Rice, and H. D. Drew, Phys. Rev. B 58, 43 (1998).
21. W. S. Yang, N. K. Kim, S. J. Yeom, S. Y. Weon, and J. S. Roh, Jpn. J. Appl. Phys., Part 1 41, 727 (2002).
22. T. Sato, T. Kuroiwa, K. Sugahara, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 41, 2105 (2002).
23. D. Wu, A. D. Li, and N. B. Ming, J. Appl. Phys. 95, 4275 (2004).
24. G. S. Gu, J. M. Xue, and J. Wang, Appl. Phys. Lett. 79, 2061 (2001).