Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films

Solid State Communications

Volumn 140, Issue 9-10, 2006, Pages 430-434

  Singh, S K ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. Ferroelectric Bi3.25La0.75Ti3O12 thin film; B. Chemical solution deposition; C. Electrical properties; C. Fatigue

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON TRAPS; FATIGUE OF MATERIALS; FERROELECTRICITY; GRAIN BOUNDARIES; MANGANESE; MORPHOLOGY; REMANENCE; SILICA; SOL-GELS; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES; REMANENT POLARIZATION; STRUCTURAL ORIENTATION; SWITCHING FIELD;

FERROELECTRIC MATERIALS;

EID: 33750350854     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.09.022     Document Type: Article

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